Micron Introduces 128 GB DDR5-8000 RDIMMs with Monolithic 32 Gb Die

by Ganesh T S on November 9, 2023 9:00 AM EST

• Posted in
• Memory
• Micron
• DRAM
• DDR5
• RDIMM

The way to high-capacity RDIMMs for servers has chiefly been done 3D stacking (3DS) of DRAM dies utilizing Through-Silicon Vias (TSVs). However, this has presented important challenges successful packaging (driving up nan cost), and has besides not been businesslike successful position of power consumption. The request for ample representation capacity RDIMMs is being chiefly driven by nan abrupt emergence of large-language models (LLMs) for generative AI and expanding CPU halfway counts. Both of these require important magnitude of DRAM to support gait pinch capacity requirements. Keeping these successful mind, Micron is introducing 128 GB DDR5 RDIMMs tin of operating astatine up to 8000 MT/s today, pinch mass-production slated for 2024.

Micron has precocious started fabricating 32 Gb monolithic DDR5 dies utilizing its proven and mature 1β technology. The caller dies person a 45%+ summation successful spot density, and are tin of reaching up to 8000 MT/s while besides operating pinch overmuch much fierce timing latencies compared to nan modular JEDEC specs. The institution is claiming that it improves power ratio by arsenic overmuch arsenic 24% compared to nan competition's 3DS TSV offerings, and nan faster cognition tin besides thief successful faster AI training times. Avoiding 3DS TSV allows Micron to optimize nan information input buffers and captious I/O circuits better, while besides reducing nan pin capacitance connected nan information lines. These lend to nan reduced powerfulness and improved speeds.

Micron has been doubling its monolithic dice density each 3 years aliases so, acknowledgment to advancements successful CMOS process arsenic good arsenic improvements successful array efficiency. The institution sees a clear way to 48 Gb and 64 Gb monolithic dies successful nan early pinch continued technological progress. Micron is besides claiming that its 1β node has reached wide accumulation up of nan competition, and that it has had nan fastest output maturity successful nan company's history. Dual-die packages and gangly form-factor (TFF) modules utilizing 1β DRAM are expected to alteration 1TB modules successful nan adjacent future.

Along pinch nan announcement of nan 128 GB RDIMMs utilizing 1β technology, nan institution besides laid retired its roadmap for upcoming products. HDM and GDDR7 are expected to predominate bandwidth-hungry applications, while RDIMMs, MCRDIMMs, and CXL solutions are successful nan pipeline for systems requiring monolithic capacity. LPDDR5X, and LPCAMM2 solutions going up to 192 GB are expected to make an quality successful power-sensitive systems arsenic early arsenic 2026.